DocumentCode :
1299290
Title :
Effects of annealing on Ti Schottky barriers on n-type GaN
Author :
Haller, Eugene E.
Volume :
33
Issue :
1
fYear :
1997
fDate :
1/2/1997 12:00:00 AM
Firstpage :
95
Lastpage :
96
Abstract :
The authors investigate the Schottky barrier heights of Ti films deposited on n-type GaN. The effective barrier height Φb0 is measured by current-voltage measurements against temperature. An increasing barrier height Φb0 from ~200 meV (as-deposited) to 250 meV after annealing at temperatures as low as 60°C is observed. After annealing at 230°C and above, a stable Φb0 or 450 meV is measured. The increase in Φb0 is not due to any macroscopic interfacial reaction
Keywords :
III-V semiconductors; Schottky barriers; annealing; characteristics measurement; gallium compounds; titanium; wide band gap semiconductors; 200 to 450 meV; 60 to 230 degC; III-V semiconductors; Schottky barrier heights; Ti-GaN; annealing; current-voltage measurements; wide bandgap semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970021
Filename :
555110
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1299290
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