Electrical Properties of Iodine-Doped CdTe Epitaxial Films on Si Substrates Grown by MOVPE

Author

Niraula, Madan ; Yasuda, K. ; Watanabe, A. ; Kai, Y. ; Ichihashi, H. ; Yamada, W. ; Oka, H. ; Matsumoto, K. ; Yoneyama, T. ; Nakanishi, T. ; Katoh, D. ; Nakashima, H. ; Agata, Y.

Author_Institution

Grad. Sch. of Eng., Nagoya Inst. of Technol., Nagoya, Japan

Volume

56

Issue

4

fYear

2009

Firstpage

1731

Lastpage

1735

Abstract

We studied the effect of iodine doping of CdTe films on Si substrates grown by MOVPE at different growth conditions. A high resistivity film was obtained by adjusting the growth temperature, Te/Cd precursor flow ratio and the dopant flow-rate. Our results show the film resistivity does not change linearly with the dopant flow-rate. The resistivity remains low and similar to that of undoped value for low dopant flow-rate, but increases abruptly when the dopant flow-rate is increased beyond certain value. Photoluminescence measurements of the films confirmed the dopant incorporation in the crystal. We explained the result of resistivity change due to the compensation of excess shallow acceptors by deep intrinsic donors.

Keywords

II-VI semiconductors; MOCVD; cadmium compounds; electrical resistivity; impurity states; iodine; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; CdTe:I; MOVPE; Si; deep intrinsic donors; dopant flow-rate; electrical properties; high resistivity film; iodine doping effect; iodine-doped epitaxial films; photoluminescence measurements; shallow acceptors; Conductivity; Crystals; Doping; Epitaxial growth; Epitaxial layers; Gamma ray detection; Gamma ray detectors; Semiconductor films; Substrates; Temperature; CdTe thick films; Gamma detector; MOVPE; high-resistivity; iodine-doping;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2009.2017262

Filename

5204652