Integration of a particle-particle-particle-mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices

Author

Wordelman, Carl J. ; Ravaioli, Umberto

Author_Institution

Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA

Volume

47

Issue

2

fYear

2000

fDate

2/1/2000 12:00:00 AM

Firstpage

410

Lastpage

416

Abstract

A particle-particle-particle-mesh (P³M) algorithm is integrated with the ensemble Monte Carlo (EMC) method for the treatment of carrier-impurity (c-i) and carrier-carrier (c-c) effects in semiconductor device simulation. Ionized impurities and charge carriers are treated granularly as opposed to the normal continuum methods and c-i and c-c interactions are calculated in three dimensions. The combined P³M-EMC method follows the approach of Hockney (1981), but is modified to treat nonuniform rectilinear meshes with arbitrary boundary conditions. Bulk mobility results are obtained for a three-dimensional (3-D) resistor and are compared with previously reported experimental and numerical results

Keywords

Monte Carlo methods; carrier mobility; collision processes; electronic engineering computing; semiconductor device models; 3D resistor; arbitrary boundary conditions; bulk mobility results; carrier-carrier effects; carrier-impurity effects; charge carriers; ensemble Monte Carlo method; granular treatment; ionized impurities; nonuniform rectilinear meshes; particle-particle-particle-mesh algorithm; semiconductor device simulation; three-dimensional resistor; ultra-small semiconductor devices; Boundary conditions; Charge carriers; Electromagnetic compatibility; MOSFET circuits; Monte Carlo methods; Particle collisions; Particle scattering; Resistors; Semiconductor devices; Semiconductor impurities;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.822288

Filename

822288