Title :
High-speed InGaAsP/InP selective proton bombarded buried crescent lasers with optical field attenuation regions
Author :
Zhang, Baijun ; Yi, Maobin ; Song, Junfeng ; Li, Dehui ; Zhang, Daming ; Gao, Dingsan
Author_Institution :
Dept. of Electron. Eng., Jilin Univ., Changchun, China
fDate :
1/8/1998 12:00:00 AM
Abstract :
A new structure of high-speed InGaAsP/InP selective proton bombarded buried crescent (SPB-BC) laser with optical field attenuation regions is reported. Optical field attenuation regions obstruct the growth and propagation of defects. The lifetime is ~8.5×105 h. The 3 dB bandwidth is in excess of 11.0 GHz, with a low parasitic capacitance (2.5 pF) for the 250 μm long cavity
Keywords :
III-V semiconductors; capacitance; gallium arsenide; indium compounds; laser cavity resonators; proton effects; semiconductor lasers; 11.0 GHz; 2.5 pF; 250 micron; 3 dB bandwidth; 8.5E5 hr; III-V semiconductors; InGaAsP-InP; buried crescent lasers; defect propagation; high-speed lasers; laser cavity; optical field attenuation regions; parasitic capacitance; selective proton bombardment;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980041
