• DocumentCode
    1300044
  • Title

    Low excess noise characteristics in thin avalanche region GaAs diodes

  • Author

    Li, K.F. ; Ong, D.S. ; David, J.P.R. ; Tozer, R.C. ; Rees, G.J. ; Robson, P.N. ; Grey, R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
  • Volume
    34
  • Issue
    1
  • fYear
    1998
  • fDate
    1/8/1998 12:00:00 AM
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    Avalanche noise measurements have been performed on a range of homojunction GaAs p+-i-n+ and n+-i-p + diodes with avalanche widths, w ranging from 1.13 to 0.050 μm. These noise measurements show that, contrary to McIntyre´s avalanche noise theory, there is large reduction in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation
  • Keywords
    III-V semiconductors; avalanche diodes; gallium arsenide; impact ionisation; semiconductor device noise; 0.05 to 1.13 micron; GaAs; GaAs diodes; avalanche noise measurements; electron initiated impact ionisation; excess noise characteristics; hole initiated impact ionisation; homojunction diodes; n+-i-p+ diodes; p+-i-n+ diodes; thin avalanche region;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980021
  • Filename
    654568
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1300044