Title :
Optical responses of InGaP/GaAs/InGaAs P-channel double heterojunction pseudomorphic MODFET
Author :
Kim, H.J. ; Kim, S.H. ; Lee, J.I. ; Kang, K.N. ; Kim, D.M. ; Cho, K.
Author_Institution :
Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea
fDate :
1/8/1998 12:00:00 AM
Abstract :
The authors report on the optical responses of a p-channel In0.49Ga0.51P/GaAs/In0.13Ga0.87 As pseudomorphic MODFET with a gate length of 1 μm. The photocurrent of the device is -0.36 mA at Vgs=-0.2 V and V ds=-3.5 V, with incident optical power of 2.15 mW. A significantly high responsivity was obtained at low incident optical power range. Current gain cut-off frequency and maximum available gain cut-off frequency were increased by 20 and 10%, respectively, under optical illumination
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; phototransistors; -0.36 mA; -3.5 V; 0.2 V; 1 micron; 2.15 mW; InGaP-GaAs-InGaAs; P-channel double heterojunction pseudomorphic MODFET; current gain cut-off frequency; gate length; incident optical power; optical illumination; optical responses; photocurrent; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980009
