Title :
Kink-free AlInAs/GaInAs/InP HEMTs grown by molecular beam epitaxy
Author :
Luo, L.F. ; Longenbach, K.F. ; Wang, W.I.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
6/7/1990 12:00:00 AM
Abstract :
Kink-free AlInAs/GaInAs/InP HEMTs have been fabricated from an MBE structure grown under normal growth condition. Devices with 1 mu m gate-length exhibit an extrinsic transconductance of 450 mS/mm and a maximum drain current of 600 mA/mm which represent the best results for 1 mu m gate devices. The DC output conductance shows no kink over the entire gate bias range. The elimination of the kink is attributed to the high quality AlInAs buffer layer and a low mismatch between the AlInAs buffer layer and InP substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; 1 micron; 450 mS; 600 mA; AlInAs-GaInAs-InP; DC output conductance; HEMTs; InP substrate; MBE structure; extrinsic transconductance; gate-length; high quality AlInAs buffer layer; kink free output; maximum drain current; molecular beam epitaxy; normal growth condition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900508
