DocumentCode :
1300703
Title :
Low-noise high-resolution BAW-based high-frequency oscillator
Author :
Guillot, Phillipe ; Philippe, Pernelle ; Berland, Corinne ; Bercher, J.-F. ; Gamand, P.
Author_Institution :
NXP Semicond., Collombelles, France
Volume :
45
Issue :
17
fYear :
2009
Firstpage :
914
Lastpage :
916
Abstract :
The design of a 500 MHz oscillator in a 65 nm CMOS process using a 2 GHz bulk acoustic wave (BAW) resonator is presented. A digital frequency control is implemented using a switched capacitor bank in parallel to the resonator. The tuning range is up to 500 kHz with a minimum step of 200 Hz. The oscillator core uses a differential topology and is designed for low phase noise (-128 dBc/Hz at 100 kHz offset) at low power consumption (0.9 mW). It is followed by a low-noise divider, which provides a 500 MHz output with a phase noise of -139 dBc/Hz at 100 kHz offset from the carrier.
Keywords :
CMOS integrated circuits; UHF oscillators; bulk acoustic wave devices; phase noise; BAW-based high-frequency oscillator; CMOS process; UHF oscillator; bulk acoustic wave resonator; differential topology; digital frequency control; frequency 2 GHz; frequency 500 MHz; low noise divider; low phase noise; low power consumption; size 65 nm; switched capacitor bank;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2009.1779
Filename :
5207550
Link To Document :
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