• DocumentCode
    1300951
  • Title

    Polarization-Independent Photodetectors With Enhanced Responsivity in a Standard Silicon-on-Insulator Complementary Metal–Oxide–Semiconductor Process

  • Author

    Moll, N. ; Morf, T. ; Fertig, M. ; Stöferle, T. ; Trauter, B. ; Mahrt, R.F. ; Weiss, J. ; Pflüger, T. ; Brenner, K.-H.

  • Author_Institution
    Zurich Res. Lab., IBM Res., Ruschlikon, Switzerland
  • Volume
    27
  • Issue
    21
  • fYear
    2009
  • Firstpage
    4892
  • Lastpage
    4896
  • Abstract
    A polarization-independent photodetector device is demonstrated that can be combined with electronic integrated circuits on a single chip. The photodetector device is fully compatible with the standard silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) process without requiring process modification or postprocessing.
  • Keywords
    CMOS integrated circuits; integrated optoelectronics; light polarisation; photodetectors; silicon-on-insulator; CMOS process; Si-JkJk; complementary metal-oxide-semiconductor process; electronic integrated circuits; polarization-independent photodetector; standard silicon-on-insulator; Complementary metal–oxide–semiconductor (CMOS) integrated circuits; photodetectors; silicon-on-insulator (SOI) technology;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2009.2030343
  • Filename
    5208207