Analysis of semiconductor intersectional waveguide optical switch-modulator

Author

Shimomura, Kazuhiko ; Suematsu, Yasuharu ; Arai, Shigehisa

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

26

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

883

Lastpage

892

Abstract

Transmission and reflection characteristics and wavelength chirping of a guided mode in a semiconductor intersectional optical switch-modulator are analyzed by considering the electric field-induced refractive index variation along with the absorption loss variation. The refractive index and absorption ratio, α¯_p, is shown to determine the performance of the switch-modulator. A transmission port is suitable for a modulation with a high extinction ratio, low insertion loss, and small wavelength chirping. The insertion loss at the reflection port depends heavily on α¯_p. A low insertion loss and high extinction ratio intersectional optical switch is possible when -α¯_p is higher than 10, which can be realized with a quantum box structure

Keywords

electro-optical devices; optical modulation; optical switches; optical waveguides; semiconductor switches; absorption loss variation; electric field-induced refractive index variation; extinction ratio; guided mode; insertion loss; reflection characteristics; semiconductor intersectional waveguide optical switch-modulator; transmission characteristics; transmission port; wavelength chirping; Absorption; Chirp; Insertion loss; Optical losses; Optical reflection; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Semiconductor waveguides;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.55530

Filename

55530