Title :
1.15-μm wavelength oxide-confined quantum-dot vertical-cavity surface-emitting laser
Author :
Huffaker, D.L. ; Deng, H. ; Deepe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
Low-threshold lasing is achieved at 1.154 μm for an oxide-confined quantum-dot (QD) vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs substrate. The long wavelength emission is obtained through use of an InAs-GaAs QD active region. A continuous-wave (CW) threshold of 502 μA is obtained for a device size of 10-μm diameter, corresponding to a threshold current density of 640 A/cm2.
Keywords :
III-V semiconductors; current density; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; semiconductor quantum dots; surface emitting lasers; 1.154 mum; 10 mum; 502 muA; GaAs; GaAs substrate; InAs-GaAs; InAs-GaAs QD active region; VCSEL; continuous-wave threshold; device size; long wavelength emission; low-threshold lasing; oxide-confined quantum-dot vertical-cavity surface-emitting laser; threshold current density; Distributed Bragg reflectors; Fiber lasers; Gallium arsenide; Laser modes; Optical surface waves; Quantum dots; Semiconductor lasers; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
