Title :
Lead chalcogenide mid-infrared diode lasers fabricated by ion-implantation
Author :
Xu, J. ; Lambrecht, A. ; Tacke, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
Ar/sup +/ implanted PbSe mid-infrared (MIR) lasers have been fabricated, characterized, and analyzed. For the first time, the operation of ion-implanted lead-salt mid-infrared diode lasers in continuous-wave (CW) mode at temperatures above 77 K was achieved. The maximum operating temperatures of 115 K in CW mode and 155 K in pulse mode were reached. These lasers have high output power, low linewidth, and small tuning rate, as well as comparatively low threshold currents. These promising properties demonstrated that ion-implanted MIR lasers are competitive candidates as tunable sources in the applications of high-resolution spectroscopy and trace-gas analysis.
Keywords :
IV-VI semiconductors; infrared spectroscopy; ion implantation; laser transitions; laser tuning; lead compounds; optical fabrication; semiconductor lasers; spectrochemical analysis; spectroscopic light sources; 115 K; 155 K; 77 K; Ar/sup +/ implanted PbSe MIR lasers; CW mode; PbSe:Ar; continuous-wave; fabrication; high output power; high-resolution spectroscopy; ion-implantation; lead chalcogenide mid-infrared diode lasers; lead-salt; low linewidth; low threshold currents; maximum operating temperatures; pulse mode; small tuning rate; trace-gas analysis; tunable sources; Argon; Diode lasers; Laser modes; Laser tuning; Lead; Power generation; Power lasers; Temperature; Threshold current; Tunable circuits and devices;
Journal_Title :
Photonics Technology Letters, IEEE
