Title :
Aging characteristics of AlGaAs/GaAs DFB lasers with a window structure
Author :
Hirata, Jiro ; Narui, H. ; Mori, Yojiro ; Kaneko, Kunihiko
Author_Institution :
Sony Corp. Res. Center, Yokohama
fDate :
10/27/1988 12:00:00 AM
Abstract :
A spectrum-monitored aging test of AlGaAs/GaAs DFB lasers with a window structure has been performed at 50°C under 5 mW output power for 3000 h. The results show a significant improvement in the reliability of the lasers. The mean increasing rate of the driving current was about 4.2% and 83% of the devices maintained stable, single-mode oscillation
Keywords :
III-V semiconductors; ageing; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; life testing; optical testing; reliability; semiconductor device testing; semiconductor junction lasers; 3000 hr; 5 mW; 50 degC; AlGaAs-GaAs; DFB lasers; III-V semiconductors; driving current; reliability improvement; rib waveguide; semiconductor lasers; single-mode oscillation; spectrum-monitored aging test; window structure;
Journal_Title :
Electronics Letters
