Title :
Models of boron redistribution during thermal oxidation with general oxidation rate
Author :
Suzuki, Kunihiro ; Miyashita, Toshihiko
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
3/1/2000 12:00:00 AM
Abstract :
It has been shown that the redistribution of boron in SiO2 is negligible in the practical temperature range between 900 and 1100°C. Utilizing this fact, we derived a model for boron redistribution with a general oxidation rate, and obtained close agreement between experimental and theoretical data
Keywords :
diffusion; elemental semiconductors; impurity distribution; leakage currents; oxidation; semiconductor-insulator boundaries; silicon; silicon compounds; 900 to 1100 degC; Si-SiO2; diffusion coefficient; dopant redistribution; leakage current; oxidation rate; thermal oxidation; threshold voltage; Analytical models; Boron; Degradation; Impurities; Leakage current; Oxidation; Predictive models; Surface fitting; Temperature distribution; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
