Title :
A channel resistance derivative method for effective channel length extraction in LDD MOSFETs
Author :
Niu, Guofu ; Cressler, John D. ; Mathew, Suraj J. ; Subbanna, Seshu
Author_Institution :
Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fDate :
3/1/2000 12:00:00 AM
Abstract :
A channel resistance derivative method for extracting the electrical effective channel length and series resistance is proposed, and demonstrated on an advanced 0.35 μm LDD CMOS technology. A clear graphic image of the LEFF and RSD is obtained directly from the measured channel resistance and its derivative with respect to the gate bias. The method also provides guidelines for the proper gate bias range selection in traditional LEFF extraction techniques
Keywords :
CMOS integrated circuits; MOSFET; semiconductor device models; CMOS technology; LDD MOSFET; channel resistance derivative method; effective channel length extraction; gate bias; series resistance; CMOS technology; Electric resistance; Electric variables; Electrical resistance measurement; Graphics; Guidelines; MOSFET circuits; Microelectronics; Optimization methods; Parameter extraction;
Journal_Title :
Electron Devices, IEEE Transactions on
