Title :
Electrical and photoelectric properties of p-Si/n+-6H-SiC heterojunction non-ultraviolet photodiode
Author :
Lianbi Li ; Zhiming Chen ; Wentao Liu ; Wenchang Li
Author_Institution :
Dept. of Electron. Eng., Xi´an Univ. of Technol., Xi´an, China
Abstract :
A p-Si/n+-6H-SiC heterojunction non-ultraviolet photodiode is fabricated on 6H-SiC substrate. Non-UV light operation of the SiC devices is initially realised. J-V measurement indicates that the heterojunction has good rectifying behaviour with a turn-on voltage of ~1~V. Under non-UV light illumination of 0.6~W/cm2, the device exhibits good photo-response with a maximum open circuit voltage Voc of 92.0 mV and photocurrent Iph of 0.6 mA/cm2.
Keywords :
elemental semiconductors; p-n heterojunctions; photoconductivity; photodiodes; rectification; semiconductor device measurement; silicon; silicon compounds; wide band gap semiconductors; 6H-SiC substrate; J-V measurement; Si-SiC; SiC devices; electrical properties; maximum open circuit voltage; nonUV light illumination; p-Si/n+-6H-SiC heterojunction nonultraviolet photodiode; photocurrent; photoelectric properties; photoresponse; rectification behaviour; silicon carbide; turn-on voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.1471
