Transconductance dependence on gate length for GaAs gate pseudomorphic and conventional SISFETs at 300 and 77K

The authors report on the transconductance dependence on gate length for pseudomorphic (PM-) and conventional GaAs gate SISFETs. With and identical material structure, except for the GaInAs channel, PM-SISFETs have higher transconductances at room temperature, for gate lengths between 1 mu m and 19 mu m. At 77 K, however it is shown that higher transconductances are obtained with conventional SISFETs having gate lengths larger than 2 mu m.