Title :
High-power CW operation of broad area InGaAlP visible light laser diodes
Author :
Itaya, Kazuhiko ; Hatakoshi, G. ; Watanabe, Yoshihiro ; Ishikawa, Masatoshi ; Uematsu, Yutaka
Author_Institution :
Toshiba Res. & Dev. Center, Kawasaki, Japan
Abstract :
Broad area InGaAlP visible light laser diodes with antireflection and high-reflection coatings have been fabricated. High power CW operation above 300 mW was obtained at 2 degrees C heat-sink temperature. This value corresponded to a light power density of 2.7 MW/cm2. The far field pattern showed a single lobe shape for output power up to 100 mW.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; gallium compounds; indium compounds; semiconductor junction lasers; 100 to 300 mW; 2 degC; CW operation; InGaAlP; antireflection coatings; broad area; far field pattern; heat-sink temperature; high power operation; high-reflection coatings; semiconductor lasers; single lobe shape; visible light laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900144
