DocumentCode :
1304974
Title :
Correlation between temperature coefficient of elasticity and fourier transform infrared spectra of silicon dioxide films for surface acoustic wave devices
Author :
Matsuda, S.M. ; Hara, M.H. ; Miura, M.M. ; Matsuda, T.M. ; Ueda, M.U. ; Satoh, Y.S. ; Hashimoto, K.H.
Author_Institution :
Microdevice R&D Dept., Taiyo Yuden Ltd., Akashi, Japan
Volume :
58
Issue :
8
fYear :
2011
fDate :
8/1/2011 12:00:00 AM
Firstpage :
1684
Lastpage :
1687
Abstract :
We investigated the correlation between the temperature coefficient of elasticity (TCE) and Fourier transform infrared (FT-IR) absorption spectra of SiO2 for SAW devices. The measurement indicated that the TCE is strongly correlated with peak frequencies; that is, with the fractional change of the Si-O-Si bond angle with temperature.
Keywords :
Fourier transform spectra; bond angles; elasticity; infrared spectra; silicon compounds; thin films; FTIR absorption spectra; Fourier transform infrared spectra; SiO2; bond angle; elasticity temperature coefficient; silicon dioxide films; surface acoustic wave devices; Absorption; Correlation; Films; Glass; Substrates; Surface acoustic wave devices; Temperature measurement;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2011.1996
Filename :
5995226
Link To Document :
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