DocumentCode
130563
Title
Terahertz CMOS integrated circuits
Author
Lee, Tong H.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2014
fDate
27-30 Aug. 2014
Firstpage
1
Lastpage
2
Abstract
Advances in circuit techniques, aided by continued lithographic scaling, will deliver CMOS technology capable of operation in the submillimeter-wave bands. Many building blocks operating at near-THz frequencies in silicon-based technologies (SiGe and CMOS) have appeared in the recent literature. Although many significant challenges remain, these results suggest that CMOS THz ICs are an inevitability. Applications that reside in the “terahertz gap,” mapped against the projected capabilities of CMOS, provide a context for identifying the most important remaining problems. The lack of efficient, high-power (watt-level) sources remains the most conspicuous impediment to further progress. The talk concludes with an examination of the potential of vacuum electronic devices to solve the transmit power problem.
Keywords
CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; lithography; silicon; submillimetre wave integrated circuits; vacuum microelectronics; CMOS technology; Si; SiGe; circuit techniques; high-power sources; lithographic scaling; silicon-based technologies; submillimeter-wave bands; terahertz CMOS integrated circuits; terahertz gap; vacuum electronic devices; Arrays; CMOS integrated circuits; CMOS technology; Imaging; Photonics; Radar imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on
Conference_Location
Hefei
Type
conf
DOI
10.1109/RFIT.2014.6933268
Filename
6933268
Link To Document