• DocumentCode
    130563
  • Title

    Terahertz CMOS integrated circuits

  • Author

    Lee, Tong H.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2014
  • fDate
    27-30 Aug. 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Advances in circuit techniques, aided by continued lithographic scaling, will deliver CMOS technology capable of operation in the submillimeter-wave bands. Many building blocks operating at near-THz frequencies in silicon-based technologies (SiGe and CMOS) have appeared in the recent literature. Although many significant challenges remain, these results suggest that CMOS THz ICs are an inevitability. Applications that reside in the “terahertz gap,” mapped against the projected capabilities of CMOS, provide a context for identifying the most important remaining problems. The lack of efficient, high-power (watt-level) sources remains the most conspicuous impediment to further progress. The talk concludes with an examination of the potential of vacuum electronic devices to solve the transmit power problem.
  • Keywords
    CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; lithography; silicon; submillimetre wave integrated circuits; vacuum microelectronics; CMOS technology; Si; SiGe; circuit techniques; high-power sources; lithographic scaling; silicon-based technologies; submillimeter-wave bands; terahertz CMOS integrated circuits; terahertz gap; vacuum electronic devices; Arrays; CMOS integrated circuits; CMOS technology; Imaging; Photonics; Radar imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio-Frequency Integration Technology (RFIT), 2014 IEEE International Symposium on
  • Conference_Location
    Hefei
  • Type

    conf

  • DOI
    10.1109/RFIT.2014.6933268
  • Filename
    6933268