Title :
Large reflectivity modulation using InGaAs-GaAs
Author :
Pezeshki, B. ; Thomas, D. ; Harris, J.S., Jr.
Author_Institution :
Solid State Lab., Stanford Univ., CA, USA
Abstract :
The first reflection modulator using electroabsorption in strained InGaAs-GaAs quantum wells is reported. With an insertion loss of 1.9 dB and a reflectivity change of 42% at room temperature, the modulator is comparable to the best devices reported in GaAs-Al-GaAs system. A framework is presented for examining the tradeoff between insertion loss and modulation ratio from a theoretical perspective and compare the predicted limits to reported devices.<>
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; light absorption; optical losses; optical modulation; reflectivity; semiconductor quantum wells; 1.9 dB; III-V semiconductors; electroabsorption; insertion loss; modulation ratio; optical modulators; reflection modulator; reflectivity change; strained InGaAs-GaAs quantum wells; Absorption; Excitons; Gallium arsenide; Insertion loss; Mirrors; Optical losses; Optical reflection; Reflectivity; Refractive index; Temperature measurement;
Journal_Title :
Photonics Technology Letters, IEEE
