Induced optical reflectivity by local variation of conductivity in MIS structures

Author

Englert, Thad J. ; Blesi, Jonathan W.

Author_Institution

Dept. of Electr. Eng., Wyoming Univ., Laramie, WY, USA

Volume

26

Issue

3

fYear

1990

fDate

3/1/1990 12:00:00 AM

Firstpage

506

Lastpage

511

Abstract

Calculations based on theoretical models of metal-insulator-semiconductor structures show that moderate applied potentials can cause sufficiently large induced inversion charge carrier densities at the semiconductor surface to yield reflectivities approaching 100% at the insulator-semiconductor interface. Using p-type silicon as the semiconductor material, positive gate potentials up to 10 V applied to the metal give reflectivities from approximately 15 to nearly 100%. The dependent of doping concentration, insulator thickness, and gate voltage are shown

Keywords

carrier density; electrical conductivity of solids; inversion layers; metal-insulator-semiconductor structures; reflectivity; semiconductor doping; 10 V; MIS structures; conductivity; doping concentration; induced inversion charge carrier densities; insulator thickness; insulator-semiconductor interface; local variation; metal-insulator-semiconductor structures; moderate applied potentials; optical reflectivity; p type Si; positive gate potentials; semiconductor surface; theoretical models; Conductivity; Electron optics; Insulation; Optical materials; Optical modulation; Optical refraction; Optical sensors; Permittivity; Reflectivity; Semiconductor materials;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.52127

Filename

52127