Title :
A compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport
Author :
Wu, Hsien-Chang ; Kuo, James B.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
2/1/1998 12:00:00 AM
Abstract :
This paper reports a compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport based on a qualitative analysis. As verified by two-dimensional (2-D) simulation results, the analytical velocity-overshoot model predicts that in a bipolar device with a very short base width, its peak electron velocity, which can exceed the saturated velocity, occurs at a location ahead of its peak electron temperature location
Keywords :
VLSI; bipolar integrated circuits; bipolar transistors; integrated circuit modelling; semiconductor device models; 2D simulation results; VLSI bipolar devices; compact velocity-overshoot model; deep-submicron bipolar devices; energy transport; peak electron temperature location; peak electron velocity; saturated velocity; Analytical models; Circuits; Doping profiles; Electrons; Equations; Gaussian processes; Predictive models; Temperature; Two dimensional displays; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
