Title :
Room temperature photocurrent spectroscopy of SiGe/Si p-i-n photodiodes grown by selective epitaxy
Author :
Vonsovici, Adrian ; Vescan, Lili ; Apetz, R. ; Koster, Alain ; Schmidt, K.
Author_Institution :
Inst. d´´Electron. Fondamental, CNRS, Orsay, France
fDate :
2/1/1998 12:00:00 AM
Abstract :
We present the photocurrent spectroscopy of Si1-xGex/Si double heterostructure p-i-n diodes selectively grown by low pressure chemical vapor deposition. The growth onto patterned wafers permits to obtain dislocation-free, fully strained Si1-xGex layers, much above the critical thickness. The band gap energy of Si1-xGex was determined at room temperature using the photocurrent spectra for Ge concentration in the range x=0.12-0.20 and compared to similar data obtained by electroluminescence
Keywords :
Ge-Si alloys; electroluminescence; elemental semiconductors; energy gap; p-i-n photodiodes; photoconductivity; semiconductor growth; semiconductor heterojunctions; semiconductor materials; silicon; spectroscopy; vapour phase epitaxial growth; EL spectra; Ge concentration; LPCVD; Si1-xGex/Si double heterostructure; SiGe-Si; SiGe/Si p-i-n photodiodes; VPE growth; band gap energy; chemical vapor deposition; dislocation-free layers; electroluminescence; fully strained Si1-xGex layers; low pressure CVD; patterned wafers; photocurrent spectra; room temperature photocurrent spectroscopy; selective epitaxy; Chemical vapor deposition; Electroluminescence; Germanium silicon alloys; P-i-n diodes; PIN photodiodes; Photoconductivity; Photonic band gap; Silicon germanium; Spectroscopy; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
