Title :
A comparison of the performance and reliability of wet-etched and dry-etched a-Si:H TFTs
Author :
GadelRab, Serag M. ; Miri, Amir M. ; Chamberlain, Savvas G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
2/1/1998 12:00:00 AM
Abstract :
In this work, we compare the performance of wet-etched and dry-etched a-Si:H TFTs. We find that wet-etching of the a-Si:H layer increases the TFT mobility and reduces the threshold voltage. Furthermore, wet-etched TFTs display improved reliability characteristics in response to gate-bias stress. Our experiments indicate that there exists residual plasma-induced damage in dry-etched TFTs, even after a long post-etching annealing step
Keywords :
MISFET; amorphous semiconductors; carrier mobility; etching; hydrogen; semiconductor device reliability; silicon; sputter etching; thin film transistors; Si:H; a-Si:H TFT; dry-etched TFT; gate-bias stress; mobility; performance comparison; post-etching annealing step; reliability characteristics; residual plasma-induced damage; threshold voltage; wet-etched TFT; Amorphous silicon; Annealing; Dry etching; Fabrication; Metallization; Plasma applications; Plasma devices; Plasma displays; Plasma properties; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
