Title :
High-current pulse-doped GaInAs MESFET
Author :
Fathimulla, A. ; Hier, H. ; Abrahams, J.
Author_Institution :
Bendix Aerosp. Technol. Centre, Allied-Signal Aerosp. Co., Columbia, MD, USA
fDate :
4/14/1988 12:00:00 AM
Abstract :
The authors report the DC and microwave performance of pulse-doped GaInAs power MESFETs. For a 0.7 μm gate-length device, a maximum drain-current density of 870 mA/mm and a peak transconductance of 325 mS/mm were measured. A maximum stable gain of 11.7 dB at 26 GHz, and an extrapolated ft of 33 GHz were obtained. These values are the highest reported for MESFETs having gates as long as 0.7 μm
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; solid-state microwave devices; 0.7 micron; 11.7 dB; 26 to 33 GHz; 325 mS; DC performance; GaInAs; III-V semiconductors; MESFET; microwave performance; peak transconductance; pulsed doped power transistor; solid-state microwave device; submicron gate length;
Journal_Title :
Electronics Letters
