Title :
Optoelectronic switch with low holding power
Author :
Pereira, Rui ; Van Hove, Marleen ; Mertens, R.P. ; Borghs, G. ; Kuijk, Maarten ; Pankove, J.I.
Author_Institution :
Interuniv. Micro Electron. Center, Leuven, Belgium
fDate :
3/1/1990 12:00:00 AM
Abstract :
A double heterostructure NpnP optoelectronic switching device with low holding power has been fabricated. In the static regime a holding power of 20 nW for a device area of 200 mu m*100 mu m was obtained. This value represents a reduction of four orders of magnitude in holding power compared to previous reported PnpN or PnN structures with equivalent device area. A higher optical sensitivity and a lower optical switching intensity is consequently obtained with these devices.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optoelectronics; optical switches; optoelectronic devices; 100 micron; 20 nW; 200 micron; DH n +-p-n-p + device; GaAs-AlGaAs; OEIC; device area; double heterostructure; holding power; low holding power; optical sensitivity; optical switching intensity; optoelectronic switching device; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900186
