Title :
Monolithic PIN-HEMT receiver with internal equaliser for long-wavelength fibre optic communications
Author :
Yano, Hiroyuki ; Kamei, H. ; Sasaki, Gaku ; Hayashi, H.
Author_Institution :
Optoelectron. R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
3/1/1990 12:00:00 AM
Abstract :
An optical receiver, in which a GaInAs PIN photodiode, an AlInAs/GaInAs HEMT high impedance amplifier and even an equaliser were integrated monolithically on an InP substrate, has been fabricated. An optical sensitivity of -30.4 dBm was obtained at 1.2 Gbit/s and 1.3 mu m wavelength.
Keywords :
digital communication systems; equalisers; error statistics; high electron mobility transistors; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; optical fibres; p-i-n diodes; photodiodes; receivers; wideband amplifiers; 1.2 Gbit/s; 1.3 micron; AlInAs-GaInAs high electron mobility transistor; BER characteristics; GaInAs photodiode; III-V semiconductors; InP substrate; OEIC; bit error rate; digital transmission; high impedance amplifier; internal equaliser; long-wavelength fibre optic communications; monolithic PIN-HEMT receiver; optical fibre links; optical receiver; optical sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900201
