Title :
Porous silicon techniques for SOI structures
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Among the most promising techniques for producing silicon-on-insu-lator (SOI) substrates suitable for fabrication of high-performance devices are those based on the oxidation of porous silicon. Porous silicon has a unique set of material properties, which lends itself to a variety of different SOI fabrication techniques.
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.1987.6323172
