Title :
Integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors for high-speed circuit applications
Author :
Mahajan, A. ; Fay, P. ; Arafa, M. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
1/1/1998 12:00:00 AM
Abstract :
A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) on InAlAs/InGaAs/InP is reported. The E-HEMTs with a 1.0-μm gate length exhibit a threshold voltage of +255 mV and a maximum dc extrinsic transconductance of 503 mS/mm at room temperature, while a threshold voltage of -317 mV and a transconductance of 390 mS/mm are measured for the D-HEMTs of the same gate length. The devices show excellent RF performance, with a unity current-gain cutoff frequency (ft) of 35 GHz and a maximum frequency of oscillation (fmax) of 95 GHz for both the E- and D-HEMT´s. To the best of the authors´ knowledge, this is the first demonstration of an E/D-HEMT technology on lattice-matched InP that is suitable for circuit integration
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; -317 mV; 1 mum; 255 mV; 35 GHz; 390 mS/mm; 503 mS/mm; 95 GHz; E/D-HEMTs; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP; InP; RF performance; depletion-mode high electron mobility transistors; enhancement-mode high electron mobility transistors; gate length; high-speed circuit applications; lattice-matched InP; maximum dc extrinsic transconductance; maximum frequency of oscillation; monolithic integration; room temperature; threshold voltage; unity current-gain cutoff frequency; Cutoff frequency; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Monolithic integrated circuits; Temperature; Threshold voltage; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
