DocumentCode
1307679
Title
Novel optically excited resonant pressure sensor
Author
Thornton, K.E.B. ; Uttamchandani, D. ; Culshaw, B.
Author_Institution
Dept. of Electron. & Electr. Eng., Strathclyde Univ., UK
Volume
24
Issue
10
fYear
1988
fDate
5/12/1988 12:00:00 AM
Firstpage
573
Lastpage
574
Abstract
A novel pressure sensitive microresonator structure has been fabricated by anisotropic etching of silicon. An intensity modulated laser beam is focused onto the resonator and generates transverse vibrations, which are detected using optical heterodyne interferometric techniques. The pressure and temperature dependence of the resonant frequency of this structure is reported
Keywords
elemental semiconductors; etching; light interferometry; nonelectric sensing devices; pressure measurement; silicon; Si; anisotropic etching; intensity modulated laser beam; microresonator structure; optical heterodyne interferometric techniques; optically excited resonant pressure sensor; resonant frequency; temperature dependence; transverse vibrations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8266
Link To Document