DocumentCode
1307690
Title
Integrity of III-V heterojunction interfaces under gamma irradiation
Author
Subramanian, S. ; Sarkar, A. ; Ungier, L. ; Goodnick, S.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Volume
44
Issue
6
fYear
1997
fDate
12/1/1997 12:00:00 AM
Firstpage
1862
Lastpage
1869
Abstract
Reliability of modern III-V semiconductor heterostructure devices meant for strong radiation environment depends upon the integrity of the hetero-interfaces under radiation. In this paper, we present some results of our investigation of a variety of heterojunction structures subjected to gamma irradiation up to 40 Mrads (Si) probed by Hall, C-V and photoluminescence measurements
Keywords
Hall effect; III-V semiconductors; characteristics measurement; gamma-ray effects; p-n heterojunctions; photoluminescence; semiconductor device reliability; 0 to 40 Mrad; C-V measurements; Hall measurements; III-V heterojunction interfaces; gamma irradiation; photoluminescence measurements; reliability; semiconductor heterostructure devices; strong radiation environment; Atomic layer deposition; Atomic measurements; Capacitance-voltage characteristics; Epitaxial layers; Gallium arsenide; Heterojunctions; III-V semiconductor materials; Molecular beam epitaxial growth; Ohmic contacts; Substrates;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.658954
Filename
658954
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