Title :
Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOXTM substrates
Author :
Liu, S.T. ; Allen, L.P. ; Anc, M.J. ; Jenkins, W.C. ; Hughes, H.L. ; Twigg, M.E. ; Lawrence, R.K.
Author_Institution :
Honeywell Inc., Plymouth, MN, USA
fDate :
12/1/1997 12:00:00 AM
Abstract :
Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOXTM substrates
Keywords :
MOSFET; SIMOX; X-ray effects; substrates; ADVANTOX substrate; NMOS transistor; partially depleted SIMOX CMOS device; total dose radiation induced back channel threshold voltage shift; Annealing; CMOS technology; Dielectric substrates; Hafnium; MOSFETs; Optical microscopy; Production; Silicon; Spectroscopy; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
