• DocumentCode
    1308655
  • Title

    Reduction of radiation induced back channel threshold voltage shifts in partially depleted SIMOX CMOS devices by using ADVANTOXTM substrates

  • Author

    Liu, S.T. ; Allen, L.P. ; Anc, M.J. ; Jenkins, W.C. ; Hughes, H.L. ; Twigg, M.E. ; Lawrence, R.K.

  • Author_Institution
    Honeywell Inc., Plymouth, MN, USA
  • Volume
    44
  • Issue
    6
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    2101
  • Lastpage
    2105
  • Abstract
    Excessive total dose radiation induced back channel threshold voltage shifts often observed in fully depleted and partially depleted NMOS transistors fabricated in full dose SIMOX wafers can be greatly reduced by use of new low dose ADVANTOXTM substrates
  • Keywords
    MOSFET; SIMOX; X-ray effects; substrates; ADVANTOX substrate; NMOS transistor; partially depleted SIMOX CMOS device; total dose radiation induced back channel threshold voltage shift; Annealing; CMOS technology; Dielectric substrates; Hafnium; MOSFETs; Optical microscopy; Production; Silicon; Spectroscopy; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.659024
  • Filename
    659024
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1308655