DocumentCode :
1308678
Title :
Theoretical analysis of 630-nm band GaInP-AlGaInP strained quantum-well lasers considering continuum states
Author :
Yen, Shun Tung ; Lee, Chien-Ping
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
33
Issue :
3
fYear :
1997
fDate :
3/1/1997 12:00:00 AM
Firstpage :
443
Lastpage :
456
Abstract :
GaInP-AlGaInP strained quantum-well lasers with emission wavelength at 630-nm band are theoretically analyzed in detail and then optimized. The valence band structure of quantum wells is obtained by evaluating the 6×6 Luttinger-Kohn Hamiltonian including the coupling among the heavy hole, the light hole, and the spin-orbital spilt-off hole bands. The effect of optical transition from/to continuum states not confined to the quantum well is studied. It is found that the optical transition from/to the continuum states is serious as the band gap of the confining layers is close to the quasi-Fermi level separation, leading to considerable radiative current. This radiative current is undesirable since the corresponding optical transition does not contribute significantly to the threshold gain. The gain-radiative current characteristic is therefore poor for confining layers containing a low Al content. To avoid unreasonable gain/absorption, the non-Markovian convolution lineshape is used instead of the conventional Lorentzian lineshape. The leakage current is high for single quantum-well lasers with wide bandgap confining layers, it can be reduced by increasing the quantum-well number, the dopant concentration, and the band gap of cladding layers. The calculated threshold current agrees well with the observation. The band gap shrinkage due to the carrier-carrier interaction is considered to obtain an emission wavelength consistent with the experimental result
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser theory; laser transitions; quantum well lasers; semiconductor device models; semiconductor doping; spectral line breadth; valence bands; 630 nm; GaInP-AlGaInP; GaInP-AlGaInP strained quantum-well lasers; Luttinger-Kohn Hamiltonian; band gap; confining layers; continuum states; conventional Lorentzian lineshape; emission wavelength; gain-radiative current characteristic; heavy hole; leakage current; light hole; low Al content; non-Markovian convolution lineshape; optical transition; optimized; quasi-Fermi level separation; radiative current; single quantum-well lasers; spin-orbital spilt-off hole bands; theoretical analysis; threshold gain; valence band structure; Absorption; Laser modes; Laser theory; Optical materials; Optical mixing; Optical refraction; Photonic band gap; Quantum well lasers; Semiconductor lasers; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.556014
Filename :
556014
Link To Document :
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