The radiation response of capacitors fabricated on bonded silicon-on-insulator substrates

Author

McMarr, P.J. ; Mrstik, B.J. ; Lawrence, R.K. ; Jernigan, G.G.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

44

Issue

6

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2115

Lastpage

2123

Abstract

Silicon-on-insulator substrates were manufactured by bonding a thermal oxide of silicon to a silicon wafer. Metal-oxide-silicon capacitors were fabricated on these substrates. Capacitors were also fabricated on unbonded thermal oxides. Capacitance-voltage measurements were performed on the bonded and unbonded oxides, before and after 10 keV X-ray irradiation. The flatband shift for the irradiated bonded oxide was nearly double that of the irradiated unbonded oxide. The radiation-induced shifts of the capacitance-voltage curves are shown to be related to the density differences between the bonded and unbonded oxides

Keywords

MOS capacitors; X-ray effects; silicon-on-insulator; wafer bonding; 10 keV; MOS capacitor; SMART-CUT; Si-SiO₂; X-ray irradiation; bonded silicon-on-insulator substrate; capacitance-voltage measurement; density; fabrication; flatband shift; silicon wafer; thermal oxide; Capacitance measurement; Capacitance-voltage characteristics; Capacitors; Hydrogen; Insulation; Laboratories; Performance evaluation; Silicon on insulator technology; Spectroscopy; Wafer bonding;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.659026

Filename

659026