Title :
1.3-μm GaInNAs-AlGaAs distributed feedback lasers
Author :
Reinhardt, M. ; Fischer, M. ; Kamp, M. ; Hofmann, J. ; Forchel, A.
Author_Institution :
Technische Phys., Wuerzburg Univ., Germany
fDate :
3/1/2000 12:00:00 AM
Abstract :
Room temperature continuous-wave operation of 1.3-μm single-mode GaInNAs-AlGaAs distributed feedback (DFB)-lasers has been realized. The laser structure has been grown by solid source molecular beam epitaxy (MBE) using an electron cyclotron resonance plasma source for nitrogen activation (ECR-MBE). Laterally to the laser ridge a metal grating is patterned in order to obtain DFB. The evanescent field of the laser mode couples to the grating resulting in single-mode DFB emission. The continuous wave threshold currents are around 120 mA for a cavity with 800-μm length and 2 μm width. Monomode emission with side-mode suppression ratios of nearly 40 dB have been obtained.
Keywords :
III-V semiconductors; aluminium compounds; current density; diffraction gratings; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser feedback; laser modes; molecular beam epitaxial growth; optical fabrication; plasma materials processing; quantum well lasers; ridge waveguides; sputter etching; waveguide lasers; 1.3 mum; 120 mA; 2 mum; 298 K; 800 mum; ECR-MBE; GaInNAs-AlGaAs; N/sub 2/ activation; cavity; continuous wave threshold currents; distributed feedback lasers; electron cyclotron resonance plasma source; evanescent field; grating; laser mode; laser ridge; laser structure; metal grating; monomode emission; room temperature continuous-wave operation; side-mode suppression ratios; single-mode DFB emission; single-mode distributed feedback lasers; solid source molecular beam epitaxy; Cyclotrons; Distributed feedback devices; Electron beams; Gratings; Laser feedback; Laser modes; Molecular beam epitaxial growth; Plasma temperature; Resonance; Solid lasers;
Journal_Title :
Photonics Technology Letters, IEEE
