Title :
A Multimode/Multiband Power Amplifier With a Boosted Supply Modulator
Author :
Kang, Daehyun ; Kim, Dongsu ; Choi, Jinsung ; Kim, Jooseung ; Cho, Yunsung ; Kim, Bumman
Author_Institution :
Dept. of Electr. Eng., Pohang Univ. of Sci. & Technol. (POSTECH), Pohang, South Korea
Abstract :
A multimode/multiband power amplifier (PA) with a boosted supply modulator is developed for handset applications. A linear broadband class-F amplifier is designed to have a constant fundamental impedance across 1.7-2 GHz and its second and third harmonic impedances are located at the high-efficiency area. To reduce the circuit size for handset application, the harmonic control circuits are merged into the broadband output matching circuit for the fundamental frequency. An envelope-tracking operation delivers high efficiency for the overall power. The linearity is improved by envelope tracking (ET) through intermodulation-distortion sweet-spot tracking at the maximum output power level. The efficiency and bandwidth (BW) are enhanced by a boosted supply modulator. Multimode operation is achieved by an ET technique with a programmable hysteresis control and automatic switching current adaptation of the hybrid supply modulator. For demonstration purpose, the PA and supply modulator are implemented using an InGaP/GaAs heterojunction bipolar transistor and a 65-nm CMOS process. For a long-term evolution signal, the envelope-tracking (ET) PA delivers a power-added efficiency (PAE) and an error vector magnitude of 33.3%-39% and 2.5%-3.5%, respectively, at an average power of 27.8 dBm across 1.7-2 GHz. For a wideband code-division multiple-access signal across 1.7-2 GHz, the ET PA performs a PAE, an ACLR1, and an ACLR2 of 40%-46.3%, from -39 to -42.5 dBc, and -51 to -58 dBc, respectively, at an average output power of 30.1 dBm. The ET PA with an EDGE signal delivers a PAE, an ACPR1, and an ACPR2 of 37%-42%, from -56.5 to -59.3 dBc, and -63.5 to -69.5 dBc, respectively, at an average power of 28 dBm across the 300-MHz BW. These results show that the proposed design achieves highly efficient and linear power amplification for multimode/multiband wireless communication applications.
Keywords :
III-V semiconductors; electric impedance; gallium arsenide; harmonic generation; indium compounds; power amplifiers; telephone sets; CMOS process; InGaP-GaAs; automatic switching current adaptation; boosted supply modulator; broadband output matching circuit; class-F amplifier; frequency 1.7 GHz to 2 GHz; handset applications; harmonic control circuits; heterojunction bipolar transistor; hybrid supply modulator; intermodulation-distortion; linear broadband; multimode/multiband power amplifier; programmable hysteresis control; second harmonic impedances; sweet-spot tracking; third harmonic impedances; Broadband communication; Capacitance; Harmonic analysis; Impedance; Modulation; Power generation; Switches; Efficient; enhanced data rates for GSM evolution (EDGE); envelope tracking (ET); handset; heterojunction bipolar transistors (HBT); linear; long-term evolution (LTE); monolithic microwave integrated circuit (MMIC); power amplifier (PA); supply modulator; wideband code division multiple access (WCDMA);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2063851