DocumentCode :
1310060
Title :
Fermi-Level Pinning at Metal/High- 
Interface Influenced by Electron State Density of Metal Gate
Author :
Yang, Z.C. ; Huang, A.P. ; Zheng, X.H. ; Xiao, Z.S. ; Liu, X.Y. ; Zhang, X.W. ; Chu, Paul K. ; Wang, W.W.
Author_Institution :
Dept. of Phys., Beihang Univ., Beijing, China
Volume :
31
Issue :
10
fYear :
2010
Firstpage :
1101
Lastpage :
1103
Abstract :
The Fermi-level pinning (FLP) at the metal/high-k interface and its dependence on the electron state density of the metal gate are investigated. It is found that the FLP is largely determined by the distortion of the vacuum level of the metal which is quantitatively ruled by the electron state density of the metal. The physical origin of the vacuum level distortion of the metal is attributed to an image charge of the interface charge in the metal. Such results indicate that the effective work function of the metal/high-k stack is also governed by the electron state density of the metal.
Keywords :
Fermi level; MIS devices; electronic density of states; high-k dielectric thin films; FLP; electron state density; fermi-level pinning; high-k interface; image charge; interface charge; metal gate; metal interface; vacuum level distortion; Cities and towns; Dielectrics; High K dielectric materials; Logic gates; Metals; Permittivity; Physics; Electron state density; Fermi-level pinning (FLP); MIS structures; work function (WF);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2062171
Filename :
5560726
Link To Document :
