DocumentCode :
1310973
Title :
Effect of 
Thermal Barrier on Reset Operations in Filament-Type Resistive Memory
Author :
Lee, Wootae ; Siddik, Manzar ; Jung, Seungjae ; Park, Jubong ; Kim, Seonghyun ; Shin, Jungho ; Lee, Joonmyoung ; Park, Sangsu ; Son, Myungwoo ; Hwang, Hyunsang
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
32
Issue :
11
fYear :
2011
Firstpage :
1573
Lastpage :
1575
Abstract :
We have investigated the effect of a Ge2Sb2Te5 (GST) thermal barrier on the reset operations in TiN/Cu/SiC/Pt devices. When the GST film was introduced as a thermal barrier, the device showed a lower reset voltage and a lower reset current than a device without the GST layer. In particular, the reset speed of the device with the GST layer was significantly faster at room temperature compared to the device without the GST layer. We attribute the improved resistive switching to the GST thermal barrier, which induces thermally assisted electrochemical reduction of the Cu filament.
Keywords :
MRAM devices; antimony compounds; copper; germanium compounds; phase change memories; platinum; semiconductor thin films; silicon compounds; titanium compounds; GST fllm; Ge2Sb2Te5; TiN-Cu-SiC-Pt; electrochemical reduction; filament-type resistive memory; lower reset current; lower reset voltage; magnetic random access memory applications; phase change memory; reset operations; temperature 293 K to 298 K; thermal barrier; Copper; Heating; Materials; Silicon carbide; Switches; Thermal resistance; Tin; $hbox{Ge}_{2}hbox{Sb}_{2}hbox{Te}_{5}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2163614
Filename :
6006505
Link To Document :
