Recent Advances in ZnO-Based Light-Emitting Diodes

Author

Choi, Yong-Seok ; Kang, Jang-Won ; Hwang, Dae-Kue ; Park, Seong-Ju

Author_Institution

Dept. of Nanobio Mater. & Electron., GIST, Gwangju, South Korea

Volume

57

Issue

1

fYear

2010

Firstpage

26

Lastpage

41

Abstract

ZnO has attracted considerable attention for optical device applications because of several potential advantages over GaN, such as commercial availability of bulk single crystals and a larger exciton binding energy (~60 meV compared with ~25 meV for GaN). Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in light-emitting diodes (LEDs). In this paper, we summarize recent progress in ZnO-based LEDs. Physical and electrical properties, bandgap engineering, and growth of n- and p-type ZnO thin films are also reviewed.

Keywords

II-VI semiconductors; III-V semiconductors; gallium compounds; light emitting diodes; zinc compounds; GaN; ZnO; bandgap engineering; bulk single crystals; electrical properties; electron volt energy 25 meV; electron volt energy 60 meV; exciton binding energy; light-emitting diodes; n-type thin films; optical device; p-type doping; p-type thin films; physical properties; Conducting materials; Conductivity; Crystals; Doping; Excitons; Gallium nitride; Light emitting diodes; Lighting control; Optical devices; Zinc oxide; ZnO-based light-emitting diodes (LEDs); p-type ZnO; zinc oxide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2033769

Filename

5325807