DocumentCode :
1311759
Title :
Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy
Author :
Kaneko, Yuya ; Kikuchi, A. ; Nomura, I. ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Volume :
26
Issue :
10
fYear :
1990
fDate :
5/1/1990 12:00:00 AM
Firstpage :
657
Lastpage :
658
Abstract :
GaInP/AlInP MQW short-wavelength lasers with AlInP cladding layers were fabricated using a gas source molecular beam epitaxy (GSMBE) for the first time. The film thickness of the GaInP wells and AlInP barriers were 3 and 2 nm, respectively. A yellow light lasing emission (576 nm) at 109 K was demonstrated by the MQW structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; semiconductor junction lasers; 109 K; 576 nm; AlInP cladding layers; GaInP-AlInP; III-V semiconductor; MQW; gas source MBE; gas-source-molecular-beam-epitaxy; multiple quantum well lasers; semiconductor lasers; short-wavelength lasers; yellow light lasing emission;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900430
Filename :
82774
Link To Document :
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