Title :
Yellow light (576 nm) lasing emission of GaInP/AlInP multiple quantum well lasers prepared by gas-source-molecular-beam-epitaxy
Author :
Kaneko, Yuya ; Kikuchi, A. ; Nomura, I. ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fDate :
5/1/1990 12:00:00 AM
Abstract :
GaInP/AlInP MQW short-wavelength lasers with AlInP cladding layers were fabricated using a gas source molecular beam epitaxy (GSMBE) for the first time. The film thickness of the GaInP wells and AlInP barriers were 3 and 2 nm, respectively. A yellow light lasing emission (576 nm) at 109 K was demonstrated by the MQW structure.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; semiconductor junction lasers; 109 K; 576 nm; AlInP cladding layers; GaInP-AlInP; III-V semiconductor; MQW; gas source MBE; gas-source-molecular-beam-epitaxy; multiple quantum well lasers; semiconductor lasers; short-wavelength lasers; yellow light lasing emission;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900430