Thin-Film Transistors Based on Indium Molybdenum Oxide Semiconductor Layers Sputtered at Room Temperature

Author

Elangovan, Elamurugu ; Saji, K.J. ; Parthiban, Sujeeth ; Goncalves, Gil ; Barquinha, Pedro ; Martins, Rui P. ; Fortunato, Elvira

Author_Institution

Dept. of Mater. Sci., New Univ. of Lisbon, Caparica, Portugal

Volume

32

Issue

10

fYear

2011

Firstpage

1391

Lastpage

1393

Abstract

Thin-film transistors (TFTs) were fabricated using a 20-nm-thick indium molybdenum oxide (IMO) semiconductor layer at room temperature. The grazing incidence x-ray diffraction patterns confirmed that the deposited films are amorphous. The average transmittance (400-2500 nm) and the optical band gap are ~ 88% and 3.95 eV, respectively. The TFTs fabricated on glass substrates showed a saturation mobility of 4.0 cm²/V·s with an I_ON/I_OFF ratio of 2 × 10³ and a threshold voltage of -1.1 V, which are encouraging preliminary results in order to develop IMO as high-performance semiconductor layer.

Keywords

X-ray optics; amorphous semiconductors; indium compounds; molybdenum compounds; sputter deposition; thin film transistors; IMO semiconductor layer; TFT; amorphous film; glass substrate; grazing incidence X-ray diffraction pattern; indium molybdenum oxide semiconductor layer; optical band gap; saturation mobility; thin-film transistor; voltage -1.1 V; Glass; Indium; Silicon; Sputtering; Substrates; Thin film transistors; Amorphous oxide semiconductors; radio-frequency (RF) sputtering; thin-film transistors (TFTs); x-ray diffraction (XRD);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2162310

Filename

6007047