Title :
OxRAM-based non volatile flip-flop in 28nm FDSOI
Author :
Jovanovic, N. ; Thomas, O. ; Vianello, E. ; Portal, J.-M. ; Nikolic, B. ; Naviner, L.
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
This paper presents a robust OxRAM-based nonvolatile flip-flop (NVFF) solution, designed for deep nano-scaled CMOS technologies. Forming, set and reset operations rely on a reliable design approach using thin gate oxide CMOS. The NVFF is benchmarked against a standard FF in 28nm CMOS FDSOI. Non-volatility is added with minimal impact on the FF performances.
Keywords :
CMOS logic circuits; CMOS memory circuits; flip-flops; integrated circuit design; integrated circuit reliability; logic design; nanoelectronics; random-access storage; silicon-on-insulator; FDSOI; NVFF solution; OxRAM-based nonvolatile flip-flop; deep nano-scaled CMOS technology; reliable design approach; reset operations; set operations; size 28 nm; standard FF performances; thin gate oxide CMOS; CMOS integrated circuits; CMOS technology; Flip-flops; Latches; Nonvolatile memory; Reliability; Transistors;
Conference_Titel :
New Circuits and Systems Conference (NEWCAS), 2014 IEEE 12th International
Conference_Location :
Trois-Rivieres, QC
DOI :
10.1109/NEWCAS.2014.6934003
