Title :
n-AlInAs/(InAs)3(GaAs)1 superlattice modulation-doped field effect transistor grown by molecular beam epitaxy
Author :
Nishiyama, Naoto ; Yano, Hiroyuki ; Nakajima, Shigeru ; Hayashi, H.
Author_Institution :
Sumitomo Electr. Ind. Ltd., Yokohama, Japan
fDate :
6/21/1990 12:00:00 AM
Abstract :
A pseudomorphic modulation-doped field effect transistor (MODFET) using a (InAs)3(GaAs)1 superlattice as a channel layer has been successfully demonstrated. The device was grown by molecular beam epitaxy. The MODFET with 0.85 mu m gate length exhibits maximum external DC transconductance and current gain cut-off frequency of 475 mS/mm and 28.5 GHz, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor superlattices; 0.85 micron; 28.5 GHz; AlInAs-(InAs) 3(GaAs); MODFET; channel layer; current gain cut-off frequency; gate length; maximum external DC transconductance; modulation-doped field effect transistor; molecular beam epitaxy; superlattice;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900578
