DocumentCode :
1313443
Title :
Acoustically coupled thickness-mode AIN-on-Si band-pass filters-Part II: simulation and analysis
Author :
Thakar, Vikram A. ; Pan, Wanling ; Ayazi, Farrokh ; Rais-Zadeh, Mina
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Volume :
59
Issue :
10
fYear :
2012
fDate :
10/1/2012 12:00:00 AM
Firstpage :
2270
Lastpage :
2277
Abstract :
In this, the second of two papers, we present numerical simulations and comprehensive analysis of acoustically coupled thickness-mode AlN-on-Si filters. We simulate the scattering parameters of such acoustically coupled filters using commercially available finite element analysis software and compare the simulation results with a set of measurements. The simulations are in good agreement with the measurements, allowing the optimization of filter characteristics. We analyze the filter response under varying geometric parameters and demonstrate that variations in the top electrode geometry allow the design of low-loss filters (insertion loss <;5 dB) with percentage bandwidth up to about 1% and ripple less than 1 dB.
Keywords :
III-V semiconductors; S-parameters; acoustic resonator filters; aluminium compounds; band-pass filters; electrodes; finite element analysis; wide band gap semiconductors; AlN; Si; acoustically coupled thickness-mode band-pass filters; electrically coupled resonator acoustic filters; filter characteristic optimization; filter response analysis; finite element analysis software; low-loss filters; numerical simulations; scattering parameters; top electrode geometry; Band pass filters; Bandwidth; Electrodes; Finite element methods; Insertion loss; Piezoelectric transducers; Resonator filters;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2012.2452
Filename :
6327498
Link To Document :
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