Title :
Shot Noise Suppression in Single Electron Transistors
Author :
Babiker, Sharief F. ; Naeem, Rania
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Khartoum, Khartoum, Sudan
Abstract :
Shot noise in a single electron transistor coupled to a dissipative environment is studied. The evolution of the charging process is modeled using classical circuit equations. The distribution of time between tunnel events in the presence of series coupling resistances is derived and used in modeling the stochastic tunneling processes. It is shown that resistive series elements result in a suppression of the Fano factor, below the theoretical 0.5 limit.
Keywords :
electric resistance; electron spin polarisation; photoemission; semiconductor device models; semiconductor device noise; shot noise; single electron transistors; stochastic processes; tunnelling; Fano factor suppression; charging process evolution; circuit equations; dissipative environment; resistive series elements; series coupling resistances; shot noise suppression; single electron transistors; stochastic tunneling processes; time distribution; tunnel events; Capacitance; Couplings; Junctions; Mathematical model; Noise; Resistance; Tunneling; Correlation; noise; single electron transistors (SETs); tunneling;
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2012.2223713
