DocumentCode :
1313787
Title :
Shot Noise Suppression in Single Electron Transistors
Author :
Babiker, Sharief F. ; Naeem, Rania
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Khartoum, Khartoum, Sudan
Volume :
11
Issue :
6
fYear :
2012
Firstpage :
1267
Lastpage :
1272
Abstract :
Shot noise in a single electron transistor coupled to a dissipative environment is studied. The evolution of the charging process is modeled using classical circuit equations. The distribution of time between tunnel events in the presence of series coupling resistances is derived and used in modeling the stochastic tunneling processes. It is shown that resistive series elements result in a suppression of the Fano factor, below the theoretical 0.5 limit.
Keywords :
electric resistance; electron spin polarisation; photoemission; semiconductor device models; semiconductor device noise; shot noise; single electron transistors; stochastic processes; tunnelling; Fano factor suppression; charging process evolution; circuit equations; dissipative environment; resistive series elements; series coupling resistances; shot noise suppression; single electron transistors; stochastic tunneling processes; time distribution; tunnel events; Capacitance; Couplings; Junctions; Mathematical model; Noise; Resistance; Tunneling; Correlation; noise; single electron transistors (SETs); tunneling;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2012.2223713
Filename :
6327675
Link To Document :
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