Title :
780 nm, low threshold current laser fabricated by two-step, solid-phase Zn diffusion
Author :
Shima, A. ; Kamizato, T. ; Takami, A. ; Karakida, S. ; Isshiki, K. ; Matsubara, H.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
6/21/1990 12:00:00 AM
Abstract :
A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20 degrees C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 mu m. The laser has operated for over 1000 h at 60 degrees C with a power of 3 mW.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor doping; semiconductor junction lasers; zinc; 1 micron; 1000 h; 20 C; 3 mW; 60 C; 780 nm; 9.4 mA; AlGaAs:Zn laser diode; MOCVD; Zn diffusion stripe laser; astigmatic distance; fundamental transverse mode; lasing wavelength; low threshold current laser; metalorganic chemical vapour deposition; semiconductors; solid-phase diffusion technique; threshold current; two step diffusion technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900598