• DocumentCode
    1314367
  • Title

    Fundamental limitation on large-signal modulation of semiconductor lasers and its implications for lightwave transmission

  • Author

    Agrawal, Govind P.

  • Author_Institution
    Inst. of Opt., Rochester Univ., NY, USA
  • Volume
    26
  • Issue
    13
  • fYear
    1990
  • fDate
    6/21/1990 12:00:00 AM
  • Firstpage
    916
  • Lastpage
    918
  • Abstract
    The performance of single-mode semiconductor lasers under large signal modulation is found to be limited by intraband gain saturation occurring when the on-state output power becomes comparable to the saturation level. The main effect of intraband gain saturation is to increase the fall time associated with the optical pulse. At high bit rates the pulse stretches over several neighbouring bits, thereby affecting the system performance. In the case of 1.55 mu m InGaAsP laser operating at bit rates approximately 10 Gbit/s intraband gain saturation limits the average power in the range approximately 10-20 mW for an acceptable system performance.
  • Keywords
    optical communication equipment; optical modulation; semiconductor junction lasers; 1.55 micron; 10 Gbit/s; 10 to 20 mW; InGaAsP laser; bit rates; fall time increase; fundamental limitation; high bit rates; implications for lightwave transmission; intraband gain saturation; large-signal modulation; on-state output power; pulse stretching; saturation level; single-mode semiconductor lasers; system performance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900599
  • Filename
    82847