DocumentCode
1314367
Title
Fundamental limitation on large-signal modulation of semiconductor lasers and its implications for lightwave transmission
Author
Agrawal, Govind P.
Author_Institution
Inst. of Opt., Rochester Univ., NY, USA
Volume
26
Issue
13
fYear
1990
fDate
6/21/1990 12:00:00 AM
Firstpage
916
Lastpage
918
Abstract
The performance of single-mode semiconductor lasers under large signal modulation is found to be limited by intraband gain saturation occurring when the on-state output power becomes comparable to the saturation level. The main effect of intraband gain saturation is to increase the fall time associated with the optical pulse. At high bit rates the pulse stretches over several neighbouring bits, thereby affecting the system performance. In the case of 1.55 mu m InGaAsP laser operating at bit rates approximately 10 Gbit/s intraband gain saturation limits the average power in the range approximately 10-20 mW for an acceptable system performance.
Keywords
optical communication equipment; optical modulation; semiconductor junction lasers; 1.55 micron; 10 Gbit/s; 10 to 20 mW; InGaAsP laser; bit rates; fall time increase; fundamental limitation; high bit rates; implications for lightwave transmission; intraband gain saturation; large-signal modulation; on-state output power; pulse stretching; saturation level; single-mode semiconductor lasers; system performance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900599
Filename
82847
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