Title :
Monolithic integration of an InGaAs/GaAs/AlGaAs strained layer SQW LED and GaAs MESFET using epitaxial lift-off
Author :
Polentier, I. ; Buydens, L. ; Ackaert, A. ; Demeester, Piet ; Van Daele, Peter ; Depestel, F. ; Lootens, Didier ; Baets, Roel
Author_Institution :
Lab. of Electromagn. & Acoust., Gent Univ., Belgium
fDate :
6/21/1990 12:00:00 AM
Abstract :
The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAs MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 mu W V-1 sr-1.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; light emitting diodes; semiconductor technology; 1.7 percent; GaAs MESFET driver; InGaAs-GaAs-AlGaAs; OEIC; epitaxial lift-off technique; external quantum efficiency; monolithic integration; strained layer SQW LED; surface emitting LED;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900604
