• DocumentCode
    1314830
  • Title

    Molecular beam deposition of n-type polycrystalline In0.6Ga0.4As for high resistances in heterojunction bipolar transistor integrated circuits

  • Author

    Mochizuki, K. ; Oka, T. ; Nakamura, T.

  • Author_Institution
    Central Res. Lab., Hitachi Ltd., Tokyo, Japan
  • Volume
    33
  • Issue
    13
  • fYear
    1997
  • fDate
    6/19/1997 12:00:00 AM
  • Firstpage
    1181
  • Abstract
    100 nm thick n-type polycrystalline In0.6Ga0.4 As layers have been grown on SiO2 by molecular beam epitaxy and their electrical properties have been investigated using Au/Pt/Ti as non-alloyed ohmic metals. A moderate sheet resistance of 4.7×102 Ω/□ was obtained, together with a low specific contact resistance of 8×10-8 Ω cm 2. This material should be useful for attaining high resistances in heterojunction bipolar transistor integrated circuits
  • Keywords
    III-V semiconductors; bipolar integrated circuits; contact resistance; gallium arsenide; gold; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; ohmic contacts; platinum; semiconductor epitaxial layers; semiconductor growth; titanium; 100 nm; Au-Pt-Ti-In0.6Ga0.4As-SiO2-GaAs; contact resistance; electrical properties; heterojunction bipolar transistor integrated circuits; molecular beam deposition; nonalloyed ohmic metals; sheet resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970796
  • Filename
    601019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1314830